中国地质学会岩矿测试技术专业委员会、国家地质实验测试中心主办

应用激光拉曼光谱研究锆石LA-ICP-MS U-Pb定年中的α通量基体效应

王家松, 许雅雯, 彭丽娜, 李国占. 应用激光拉曼光谱研究锆石LA-ICP-MS U-Pb定年中的α通量基体效应[J]. 岩矿测试, 2016, 35(5): 458-467. doi: 10.15898/j.cnki.11-2131/td.2016.05.003
引用本文: 王家松, 许雅雯, 彭丽娜, 李国占. 应用激光拉曼光谱研究锆石LA-ICP-MS U-Pb定年中的α通量基体效应[J]. 岩矿测试, 2016, 35(5): 458-467. doi: 10.15898/j.cnki.11-2131/td.2016.05.003
Jia-song WANG, Ya-wen XU, Li-na PENG, Guo-zhan LI. Laser Raman Spectroscopic Study and LA-ICP-MS U-Pb Dating of Zircons from the Badaling Granitic Complex[J]. Rock and Mineral Analysis, 2016, 35(5): 458-467. doi: 10.15898/j.cnki.11-2131/td.2016.05.003
Citation: Jia-song WANG, Ya-wen XU, Li-na PENG, Guo-zhan LI. Laser Raman Spectroscopic Study and LA-ICP-MS U-Pb Dating of Zircons from the Badaling Granitic Complex[J]. Rock and Mineral Analysis, 2016, 35(5): 458-467. doi: 10.15898/j.cnki.11-2131/td.2016.05.003

应用激光拉曼光谱研究锆石LA-ICP-MS U-Pb定年中的α通量基体效应

  • 基金项目:
    中国地质调查局工作项目——锆石、磷灰石微区原位U-Pb同位素测试方法研究(12120114001701)
详细信息
    作者简介: 王家松, 硕士, 工程师, 主要从事同位素地球化学及年代学研究工作。E-mail:372516720@qq.com
  • 中图分类号: P618.85;O657.37;O657.63

Laser Raman Spectroscopic Study and LA-ICP-MS U-Pb Dating of Zircons from the Badaling Granitic Complex

  • α通量基体效应是由标准锆石与样品锆石之间的晶体损伤(以α通量表示)不同引起的激光剥蚀速率和坑下分馏行为的差异,已被证实是导致锆石LA-ICP-MS U-Pb定年结果存在系统偏倚的重要原因。α通量越高,剥蚀速率越快,坑下分馏越明显,然而α通量基体效应的校正尚未引起足够的重视。本文采用激光拉曼光谱和LA-ICP-MS对八达岭花岗杂岩样品进行研究,结果表明:实际α通量(DαP)≤0.75×1018 g-1的锆石样品,蜕晶化程度较弱,其定年结果存在的α通量基体效应可以忽略;DαP>0.75×1018 g-1的锆石样品,蜕晶化程度较高,其定年结果受α通量基体效应的影响明显,依据年龄差-DαP经验方程如y=347.8×exp(0.260×10-15x)进行校正可获得准确的年龄结果。本研究认为:采用激光拉曼光谱和半高宽(FWHM)-DαP校准曲线获得目标锆石DαP,利用年龄差-DαP经验方程估计LA-ICP-MS系统偏倚,是校正α通量基体效应的可行途径。
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  • 图 1  岩石探针片样品中代表性锆石的阴极发光(CL)图像

    Figure 1. 

    图 2  四件岩石样品中锆石的ν(SiO4)拉曼光谱特征峰

    Figure 2. 

    图 3  标准锆石及样品锆石的LA-ICP-MS U-Pb数据谐和图及年龄统计结果

    Figure 3. 

    表 1  4件样品锆石的U、Th含量

    Table 1.  U and Th contents of zircons from four rock samples

    样品锆石 U含量(μg/g) Th含量(μg/g)
    BTS1 45~158 57~518
    BTS3 2212~3846 897~2650
    BTS9 56~487 43~471
    BTS10 17~150 13~168
    下载: 导出CSV

    表 2  22个测点的ν(SiO4)拉曼特征峰参数及DαP数据

    Table 2.  DαP and the Raman band of ν(SiO4) of 22 points

    测点编号 测点
    位置
    峰位
    (cm-1)
    半高宽
    (cm-1)
    (DαP)a
    (1018 g-1)
    (DαP)b
    (1018 g-1)
    Δ(DαP)
    (%)
    BTS1-5-1.1 核部 1007 4.8±0.3 0.26 0.28±0.02 7.69
    BTS1-5-1.2 边部 1007 6.2±0.3 0.36 0.37±0.02 2.78
    BTS1-5-10.1 核部 1007 6.2±0.3 0.36 0.37±0.02 2.78
    BTS1-5-10.2 边部 1007 6.2±0.3 0.36 0.37±0.02 2.78
    BTS3-6-1.1 中心 1000 12.7±0.3 0.82 0.86±0.03 4.88
    BTS3-6-1.2 边缘 1000 (44.8)c / # #
    BTS3-6-2.1 边缘 999 28.9±0.3 / 3.87±0.15 /
    BTS3-6-2.2 中心 1004 12.7±0.3 0.82 0.86±0.03 4.88
    BTS3-1-1.1 边缘 999 25.6±0.3 / 2.71±0.08 /
    BTS3-1-1.2 次边缘 997 19.2±0.3 1.29 1.55±0.04 20.16
    BTS3-1-1.3 次中心 996 22.4±0.3 / 2.04±0.05 /
    BTS3-1-1.4 中心 999 19.2±0.3 1.29 1.55±0.04 20.16
    BTS9-8-3.1 幔部 1005 6.2±0.3 0.36 0.37±0.02 2.78
    BTS9-8-3.2 边部 1005 6.2±0.3 0.36 0.37±0.02 2.78
    BTS9-8-3.3 核部 1004 12.7±0.3 0.82 0.87±0.03 6.10
    BTS9-7-1.1 核部 1005 9.5±0.3 0.59 0.60±0.02 1.69
    BTS9-7-1.2 边部 1005 6.7±0.3 0.39 0.40±0.02 2.56
    BTS10-3-4.1 中心 1007 6.3±0.3 0.36 0.37±0.02 2.78
    BTS10-3-4.2 边缘 1007 6.2±0.3 0.36 0.37±0.02 2.78
    BTS10-3-1.1 中心 1007 6.2±0.3 0.36 0.37±0.02 2.78
    BTS10-3-1.2 边缘 1005 9.5±0.3 0.59 0.60±0.02 1.69
    BTS10-3-1.3 边缘 1005 9.5±0.3 0.59 0.60±0.02 1.69
    Plešoviced 10~30 0.63~/ 0.64~4.62 /
    91500e 2~8 0.06~0.49 0.11~0.49 /
    注:(DαP)a代表采用Nasdala等[12](2001)的经验方程计算的DαP;(DαP)b代表采用Palenik等[13](2003)的经验方程计算的DαP;Δ(DαP)=[(DαP)b-(DαP)a]/(DαP)a×100;c表示BTS3-6-1.2测点的半高宽由于峰强过低,受背景干扰影响大而未能准确计算;d:Plešovice的1008 cm-1半高宽引自Sláma等[15](2008);e:91500的1008 cm-1半高宽引自Wiedenbeck等[16](2004)。“/”表示不适用,“#”表示无法进行计算,“—”表示不涉及。
    下载: 导出CSV
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出版历程
收稿日期:  2016-02-01
修回日期:  2016-05-01
录用日期:  2016-09-15

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