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高纯石英（SiO2）评述（二）：晶格杂质的活化与分离技术

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林敏, 贾倩, 刘子源, 魏炎, 刘斌, 孟雨, 邱航, 徐顺秋, 雷绍民. 高纯石英（SiO2）评述（二）：晶格杂质的活化与分离技术[J]. 矿产综合利用, 2022, 43(6): 21-25. doi: 10.3969/j.issn.1000-6532.2022.06.004
引用本文: 林敏, 贾倩, 刘子源, 魏炎, 刘斌, 孟雨, 邱航, 徐顺秋, 雷绍民. 高纯石英（SiO2）评述（二）：晶格杂质的活化与分离技术[J]. 矿产综合利用, 2022, 43(6): 21-25. doi: 10.3969/j.issn.1000-6532.2022.06.004
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Lin Min, Jia Qian, Liu Ziyuan, Wei Yan, Liu Bin, Meng Yu, Qiu Hang, Xu Shunqiu, Lei Shaomin. Review for High-purity Quartz (SiO2) (Part Ⅱ): Activation and Separation of Lattice Impurities[J]. Multipurpose Utilization of Mineral Resources, 2022, 43(6): 21-25. doi: 10.3969/j.issn.1000-6532.2022.06.004
Citation: Lin Min, Jia Qian, Liu Ziyuan, Wei Yan, Liu Bin, Meng Yu, Qiu Hang, Xu Shunqiu, Lei Shaomin. Review for High-purity Quartz (SiO2) (Part Ⅱ): Activation and Separation of Lattice Impurities[J]. Multipurpose Utilization of Mineral Resources, 2022, 43(6): 21-25. doi: 10.3969/j.issn.1000-6532.2022.06.004
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高纯石英（SiO2）评述（二）：晶格杂质的活化与分离技术

  • 1.

    武汉京东方光电科技有限公司，湖北　武汉　430040

  • 2.

    武汉理工大学资源与环境工程学院，湖北　武汉　430070

详细信息
    作者简介: 林敏（1993-），男，工程师，长期从事高纯石英、TFT-LCD半导体显示基础材料领域

  • 中图分类号: TD985; P619.23+5

Review for High-purity Quartz (SiO2) (Part Ⅱ): Activation and Separation of Lattice Impurities

  • 1.

    Wuhan BOE Optoelectronics Technology Co., Ltd., Wuhan, Hubei, China

  • 2.

    School of Resources and Environmental Engineering, Wuhan University of Technology, Wuhan, Hubei, China

    摘要

  • 高纯石英著以杂质极少、纯度极高，现已广泛地应用于光纤通信、光伏、航空航天、半导体显示等高新技术产业。广泛赋存于石英晶体结构中的微量金属、非金属元素（H、Li、B、Na、Al、P、K、Ca、Fe、Ti等）因被Si-O-Si键紧密束缚而难以被常规的选矿技术分离。本文详细地阐述了高纯石英中被晶格束缚的微量元素赋存机制，并对国际上高品质石英晶体结构中的微量元素的先进分离技术进行了全面、系统地概述；基于近年来我国高纯石英基础理论研究进展，对我国高纯石英晶格杂质分离的基础理论研究提出合理化的科学建议。

    High-purity quartz, famous for low impurities and high purity, has been widely used in optical fiber communication, photovoltaic, aerospace, semiconductor display and other high-tech industries. The trace metal and nonmetallic elements (H, Li, B, Na, Al, P, K, Ca, Fe, Ti, etc.) widely occurring in quartz crystal structure are closely bound by Si-O-Si bond, which is difficult to be separated by conventional mineral processing technology. In this paper, the occurrence mechanism of trace elements bound by lattice in high-purity quartz is described in detail, and the advanced separation technology of trace elements in the crystal structure of high-quality quartz in the world is comprehensively and systematically summarized. Based on the research progress of the basic theory of high-purity quartz in China in recent years, some reasonable scientific suggestions on the basic theory of impurity separation of high-purity quartz lattice in China are put forward.

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  • 图 1  α-石英中五种典型晶格取代分子模拟图像[4]

    Figure 1. 

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    图 2  氯化焙烧后石英颗粒表面形貌

    Figure 2. 

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    图 3  真空高温焙烧后石英颗粒剖面形貌

    Figure 3. 

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    图 4  SiO2同质多象变体的转变温度

    Figure 4. 

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    表 1  α-石英中五种典型晶格取代分子模拟参数[4]

    Table 1.  Simulation parameters of five substitutions in α-quartz[4]

    结构键长/Å键角/（°）能量/eV
    Si-O-SiSi-O: 1.61O-Si-O: 108.64Si-O-Si 142.37-23663.02
    Si=Al+LiAl-O: 1.70-1.77O-Al-O: 103.10-117.03Al-O-Si:125.21-137.47-23804.49
    2Si=Al+PAl-O:1.79-1.72
    P-O:1.48- 1.53    		O-P-O: 105.64-113.26
    O-Al-O: 102.91-114.12    		P-O-Al:145.27-23683.07
    Si=TiTi-O: 1.80O-Ti-O: 108.48-111.13Ti-O-Si: 132.66-135.24-25159.76
    Si=4HO-H:0.97- 0.99H-O-Si: 111.07-125.47-23615.62
    Si=B+HB-O: 1.40
    H-O: 0.98    		O-B-O: 117.38-118.72
    H-O-Si: 116.6    		B-O-Si: 134.66-158.35-23647.24
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    • 参考文献(13)
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收稿日期:  2020-08-25
刊出日期:  2022-12-25

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